Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes

Vishnu Gopal; Raghvendra Sahai Saxena

doi:doi:10.11648/j.jeee.20231104.11

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Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes

Vishnu Gopal, Raghvendra Sahai Saxena

Published in Journal of Electrical and Electronic Engineering (Volume 11, Issue 4)

Received: 3 July 2023 Accepted: 5 August 2023 Published: 15 August 2023

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Abstract

In this paper we propose an alternative approach to model the performance limiting current leakage mechanism in GaSb-rich type II superlattice diodes than reported earlier. The reported conclusions are based on the analysis of the current – voltage (I – V) and dynamic resistance – voltage (R_d – V) characteristics of these diodes. None of the carrier transport parameters evaluated from independent measurements on similar samples are used in the present analysis as some of the material parameters like carrier concentrations and mobilities are evaluated by Hall measurements along the planes parallel to the deposited layers constituting the superlattice, whereas the transport of carriers in practical superlattice diodes takes place in the vertical direction. Instead, we have used a method which extracts the desired parameters from the measured I – V itself. Our analysis has shown that the GaSb-rich superlattice diode’s performance limiting leakage current mechanism is the contribution from surface leakage currents, which have been modelled as shunt current that is of ohmic nature in low reverse bias region near zero-bias. The same leakage current however grows in its own proportion leading to an exponential increase of the leakage current in the higher reverse bias region. The reverse bias region corresponding to the exponential increase of the leakage current exhibits consequent degradation in the dynamic resistance of the diode leaving behind a peak in the dynamic resistance characteristic. The reverse bias voltage corresponding to the peak dynamic resistance is the limiting bias voltage for the ohmic behaviour of the shunt current.

Published in	Journal of Electrical and Electronic Engineering (Volume 11, Issue 4)
DOI	10.11648/j.jeee.20231104.11
Page(s)	82-88
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Superlattice Diode, GaSb-Rich, (I – V) Characteristics, Dynamic Resistance Characteristics

References

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[3]	Gopal, V., Li, Q., He, J., He, K., Lin, C. and Hu, W., (2016) J. Appl. Phys. Vol. 120 084508.
[4]	Gopal, V., (2022) Journal of Electrical and Electronic Engineering Vol. 20 (5), 180.
[5]	Saxena R. S., Saini N. K., Bhan R. K. and Sharma R. K. (2014) Inf. Phys. Technol. Vol. 67, 58.
[6]	Bhan R. K. and Dhar V. (2019) Opto-Electronics Review Vol. 27 (2), 174.
[7]	Yang, Q. K., Fuchs, F., Schmitz, J. and Pletschen, W. (2002) Appl. Phys. Lett. Vol. 81, 4757 (2002).
[8]	Gopal, V., Plis, E., Rodriguez, J. -B. Jones, C. E., Faraone, L. and Krishna, S. (2008) J. Appl. Phys. Vol. 104, 124506.
[9]	Nguyen, J., Ting, Z., Hill, C. J., Sobel, A., Keo, S. A. and Gunapala, S. D. (2009) J. Inf. Phys. Technol. Vol. 52, 317.
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APA Style

Vishnu Gopal, Raghvendra Sahai Saxena. (2023). Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes. Journal of Electrical and Electronic Engineering, 11(4), 82-88. https://doi.org/10.11648/j.jeee.20231104.11

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ACS Style

Vishnu Gopal; Raghvendra Sahai Saxena. Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes. J. Electr. Electron. Eng. 2023, 11(4), 82-88. doi: 10.11648/j.jeee.20231104.11

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AMA Style

Vishnu Gopal, Raghvendra Sahai Saxena. Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes. J Electr Electron Eng. 2023;11(4):82-88. doi: 10.11648/j.jeee.20231104.11

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@article{10.11648/j.jeee.20231104.11,
  author = {Vishnu Gopal and Raghvendra Sahai Saxena},
  title = {Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {11},
  number = {4},
  pages = {82-88},
  doi = {10.11648/j.jeee.20231104.11},
  url = {https://doi.org/10.11648/j.jeee.20231104.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20231104.11},
  abstract = {In this paper we propose an alternative approach to model the performance limiting current leakage mechanism in GaSb-rich type II superlattice diodes than reported earlier. The reported conclusions are based on the analysis of the current – voltage (I – V) and dynamic resistance – voltage (Rd – V) characteristics of these diodes. None of the carrier transport parameters evaluated from independent measurements on similar samples are used in the present analysis as some of the material parameters like carrier concentrations and mobilities are evaluated by Hall measurements along the planes parallel to the deposited layers constituting the superlattice, whereas the transport of carriers in practical superlattice diodes takes place in the vertical direction. Instead, we have used a method which extracts the desired parameters from the measured I – V itself. Our analysis has shown that the GaSb-rich superlattice diode’s performance limiting leakage current mechanism is the contribution from surface leakage currents, which have been modelled as shunt current that is of ohmic nature in low reverse bias region near zero-bias. The same leakage current however grows in its own proportion leading to an exponential increase of the leakage current in the higher reverse bias region. The reverse bias region corresponding to the exponential increase of the leakage current exhibits consequent degradation in the dynamic resistance of the diode leaving behind a peak in the dynamic resistance characteristic. The reverse bias voltage corresponding to the peak dynamic resistance is the limiting bias voltage for the ohmic behaviour of the shunt current.},
 year = {2023}
}

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TY  - JOUR
T1  - Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes
AU  - Vishnu Gopal
AU  - Raghvendra Sahai Saxena
Y1  - 2023/08/15
PY  - 2023
N1  - https://doi.org/10.11648/j.jeee.20231104.11
DO  - 10.11648/j.jeee.20231104.11
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 82
EP  - 88
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20231104.11
AB  - In this paper we propose an alternative approach to model the performance limiting current leakage mechanism in GaSb-rich type II superlattice diodes than reported earlier. The reported conclusions are based on the analysis of the current – voltage (I – V) and dynamic resistance – voltage (Rd – V) characteristics of these diodes. None of the carrier transport parameters evaluated from independent measurements on similar samples are used in the present analysis as some of the material parameters like carrier concentrations and mobilities are evaluated by Hall measurements along the planes parallel to the deposited layers constituting the superlattice, whereas the transport of carriers in practical superlattice diodes takes place in the vertical direction. Instead, we have used a method which extracts the desired parameters from the measured I – V itself. Our analysis has shown that the GaSb-rich superlattice diode’s performance limiting leakage current mechanism is the contribution from surface leakage currents, which have been modelled as shunt current that is of ohmic nature in low reverse bias region near zero-bias. The same leakage current however grows in its own proportion leading to an exponential increase of the leakage current in the higher reverse bias region. The reverse bias region corresponding to the exponential increase of the leakage current exhibits consequent degradation in the dynamic resistance of the diode leaving behind a peak in the dynamic resistance characteristic. The reverse bias voltage corresponding to the peak dynamic resistance is the limiting bias voltage for the ohmic behaviour of the shunt current.
VL  - 11
IS  - 4
ER  -

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Author Information

Vishnu Gopal

Institute of Defence Scientists and Technologists, Delhi, India
Raghvendra Sahai Saxena

Solid State Physics Laboratory, Delhi, India

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Plain Text BibTeX RIS

APA Style

Vishnu Gopal, Raghvendra Sahai Saxena. (2023). Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes. Journal of Electrical and Electronic Engineering, 11(4), 82-88. https://doi.org/10.11648/j.jeee.20231104.11

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ACS Style

Vishnu Gopal; Raghvendra Sahai Saxena. Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes. J. Electr. Electron. Eng. 2023, 11(4), 82-88. doi: 10.11648/j.jeee.20231104.11

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AMA Style

Vishnu Gopal, Raghvendra Sahai Saxena. Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes. J Electr Electron Eng. 2023;11(4):82-88. doi: 10.11648/j.jeee.20231104.11

Copy | Download

@article{10.11648/j.jeee.20231104.11,
  author = {Vishnu Gopal and Raghvendra Sahai Saxena},
  title = {Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {11},
  number = {4},
  pages = {82-88},
  doi = {10.11648/j.jeee.20231104.11},
  url = {https://doi.org/10.11648/j.jeee.20231104.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20231104.11},
  abstract = {In this paper we propose an alternative approach to model the performance limiting current leakage mechanism in GaSb-rich type II superlattice diodes than reported earlier. The reported conclusions are based on the analysis of the current – voltage (I – V) and dynamic resistance – voltage (Rd – V) characteristics of these diodes. None of the carrier transport parameters evaluated from independent measurements on similar samples are used in the present analysis as some of the material parameters like carrier concentrations and mobilities are evaluated by Hall measurements along the planes parallel to the deposited layers constituting the superlattice, whereas the transport of carriers in practical superlattice diodes takes place in the vertical direction. Instead, we have used a method which extracts the desired parameters from the measured I – V itself. Our analysis has shown that the GaSb-rich superlattice diode’s performance limiting leakage current mechanism is the contribution from surface leakage currents, which have been modelled as shunt current that is of ohmic nature in low reverse bias region near zero-bias. The same leakage current however grows in its own proportion leading to an exponential increase of the leakage current in the higher reverse bias region. The reverse bias region corresponding to the exponential increase of the leakage current exhibits consequent degradation in the dynamic resistance of the diode leaving behind a peak in the dynamic resistance characteristic. The reverse bias voltage corresponding to the peak dynamic resistance is the limiting bias voltage for the ohmic behaviour of the shunt current.},
 year = {2023}
}

Copy | Download

TY  - JOUR
T1  - Modelling of Current Transport Mechanisms in GaSb-Rich Type-II Superlattice Infrared Photodiodes
AU  - Vishnu Gopal
AU  - Raghvendra Sahai Saxena
Y1  - 2023/08/15
PY  - 2023
N1  - https://doi.org/10.11648/j.jeee.20231104.11
DO  - 10.11648/j.jeee.20231104.11
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 82
EP  - 88
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20231104.11
AB  - In this paper we propose an alternative approach to model the performance limiting current leakage mechanism in GaSb-rich type II superlattice diodes than reported earlier. The reported conclusions are based on the analysis of the current – voltage (I – V) and dynamic resistance – voltage (Rd – V) characteristics of these diodes. None of the carrier transport parameters evaluated from independent measurements on similar samples are used in the present analysis as some of the material parameters like carrier concentrations and mobilities are evaluated by Hall measurements along the planes parallel to the deposited layers constituting the superlattice, whereas the transport of carriers in practical superlattice diodes takes place in the vertical direction. Instead, we have used a method which extracts the desired parameters from the measured I – V itself. Our analysis has shown that the GaSb-rich superlattice diode’s performance limiting leakage current mechanism is the contribution from surface leakage currents, which have been modelled as shunt current that is of ohmic nature in low reverse bias region near zero-bias. The same leakage current however grows in its own proportion leading to an exponential increase of the leakage current in the higher reverse bias region. The reverse bias region corresponding to the exponential increase of the leakage current exhibits consequent degradation in the dynamic resistance of the diode leaving behind a peak in the dynamic resistance characteristic. The reverse bias voltage corresponding to the peak dynamic resistance is the limiting bias voltage for the ohmic behaviour of the shunt current.
VL  - 11
IS  - 4
ER  -

Copy | Download