A Method of Determining the Recombination Centre Level in High-Speed Power Devices

Yong Taek Pak; Nam Chol Yu; KyongIl Chu; Kum Jun Ryang

doi:doi:10.11648/j.jeee.20221003.13

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A Method of Determining the Recombination Centre Level in High-Speed Power Devices

Yong Taek Pak, Nam Chol Yu, KyongIl Chu, Kum Jun Ryang

Published in Journal of Electrical and Electronic Engineering (Volume 10, Issue 3)

Received: 23 March 2022 Accepted: 10 May 2022 Published: 8 June 2022

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Abstract

Rational adjusting 3 main parameters of fast p⁺nn⁺ structure such as the forward voltage drop, reverse recovery time and reverse current means to control rationally the carrier lifetime of high and low level and the space-charge generation carrier lifetime. In other words, we should make the lifetime of the high-level carrier and the space charge generation carrier as long as possible but the low-level carrier lifetime as short as possible. The best way to satisfying these relations is forming the optimal recombination center level. In this paper, we analyze of optimal recombination center level to adjust rationally the 3 main parameters of fast p⁺nn⁺ structure - forward voltage drop, reverse recovery time and reverse current. Forward voltage drop of p⁺nn⁺ structure is affected strongly by the high-level carrier lifetime. Reverse current is affected strongly by the low-level lifetime and reverse recovery time is affected strongly by the space-charge generation lifetime. These 3 carrier lifetimes influence 3 main parameters of p⁺nn⁺ structure differently. When we decrease the low-level carrier lifetime in order to decrease the reverse recovery time, the forward voltage drop increases and when we increase the high-level carrier lifetime for reducing the forward voltage drop, the reverse recovery time increases. So, in order to adjust these conflicting relations, we will illuminate about the recombination center level formed in the basic floor of p⁺nn⁺ structure. On the other hand, to determine the recombination center level coincide with practical recombination center level, we suggest the analytic method of determination the recombination center level formed by 2 carrier lifetime regulation sources.

Published in	Journal of Electrical and Electronic Engineering (Volume 10, Issue 3)
DOI	10.11648/j.jeee.20221003.13
Page(s)	86-94
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Optimal Recombination Center Level, p⁺nn⁺ Structure, 3 Main Parameters, Analysis

References

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APA Style

Yong Taek Pak, Nam Chol Yu, KyongIl Chu, Kum Jun Ryang. (2022). A Method of Determining the Recombination Centre Level in High-Speed Power Devices. Journal of Electrical and Electronic Engineering, 10(3), 86-94. https://doi.org/10.11648/j.jeee.20221003.13

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ACS Style

Yong Taek Pak; Nam Chol Yu; KyongIl Chu; Kum Jun Ryang. A Method of Determining the Recombination Centre Level in High-Speed Power Devices. J. Electr. Electron. Eng. 2022, 10(3), 86-94. doi: 10.11648/j.jeee.20221003.13

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AMA Style

Yong Taek Pak, Nam Chol Yu, KyongIl Chu, Kum Jun Ryang. A Method of Determining the Recombination Centre Level in High-Speed Power Devices. J Electr Electron Eng. 2022;10(3):86-94. doi: 10.11648/j.jeee.20221003.13

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@article{10.11648/j.jeee.20221003.13,
  author = {Yong Taek Pak and Nam Chol Yu and KyongIl Chu and Kum Jun Ryang},
  title = {A Method of Determining the Recombination Centre Level in High-Speed Power Devices},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {10},
  number = {3},
  pages = {86-94},
  doi = {10.11648/j.jeee.20221003.13},
  url = {https://doi.org/10.11648/j.jeee.20221003.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20221003.13},
  abstract = {Rational adjusting 3 main parameters of fast p+nn+ structure such as the forward voltage drop, reverse recovery time and reverse current means to control rationally the carrier lifetime of high and low level and the space-charge generation carrier lifetime. In other words, we should make the lifetime of the high-level carrier and the space charge generation carrier as long as possible but the low-level carrier lifetime as short as possible. The best way to satisfying these relations is forming the optimal recombination center level. In this paper, we analyze of optimal recombination center level to adjust rationally the 3 main parameters of fast p+nn+ structure - forward voltage drop, reverse recovery time and reverse current. Forward voltage drop of p+nn+ structure is affected strongly by the high-level carrier lifetime. Reverse current is affected strongly by the low-level lifetime and reverse recovery time is affected strongly by the space-charge generation lifetime. These 3 carrier lifetimes influence 3 main parameters of p+nn+ structure differently. When we decrease the low-level carrier lifetime in order to decrease the reverse recovery time, the forward voltage drop increases and when we increase the high-level carrier lifetime for reducing the forward voltage drop, the reverse recovery time increases. So, in order to adjust these conflicting relations, we will illuminate about the recombination center level formed in the basic floor of p+nn+ structure. On the other hand, to determine the recombination center level coincide with practical recombination center level, we suggest the analytic method of determination the recombination center level formed by 2 carrier lifetime regulation sources.},
 year = {2022}
}

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TY  - JOUR
T1  - A Method of Determining the Recombination Centre Level in High-Speed Power Devices
AU  - Yong Taek Pak
AU  - Nam Chol Yu
AU  - KyongIl Chu
AU  - Kum Jun Ryang
Y1  - 2022/06/08
PY  - 2022
N1  - https://doi.org/10.11648/j.jeee.20221003.13
DO  - 10.11648/j.jeee.20221003.13
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 86
EP  - 94
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20221003.13
AB  - Rational adjusting 3 main parameters of fast p+nn+ structure such as the forward voltage drop, reverse recovery time and reverse current means to control rationally the carrier lifetime of high and low level and the space-charge generation carrier lifetime. In other words, we should make the lifetime of the high-level carrier and the space charge generation carrier as long as possible but the low-level carrier lifetime as short as possible. The best way to satisfying these relations is forming the optimal recombination center level. In this paper, we analyze of optimal recombination center level to adjust rationally the 3 main parameters of fast p+nn+ structure - forward voltage drop, reverse recovery time and reverse current. Forward voltage drop of p+nn+ structure is affected strongly by the high-level carrier lifetime. Reverse current is affected strongly by the low-level lifetime and reverse recovery time is affected strongly by the space-charge generation lifetime. These 3 carrier lifetimes influence 3 main parameters of p+nn+ structure differently. When we decrease the low-level carrier lifetime in order to decrease the reverse recovery time, the forward voltage drop increases and when we increase the high-level carrier lifetime for reducing the forward voltage drop, the reverse recovery time increases. So, in order to adjust these conflicting relations, we will illuminate about the recombination center level formed in the basic floor of p+nn+ structure. On the other hand, to determine the recombination center level coincide with practical recombination center level, we suggest the analytic method of determination the recombination center level formed by 2 carrier lifetime regulation sources.
VL  - 10
IS  - 3
ER  -

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Author Information

Yong Taek Pak

Institute of Semiconductor, Kim Chaek University of Technology, Pyongyang, Democratic People’s Republic of Korea
Nam Chol Yu

School of Science and Engineering, Kim Chaek University of Technology, Pyongyang, Democratic People’s Republic of Korea
KyongIl Chu

Faculty of Physics, Kim Jong Tae Haeju University of Education, Haeju, Democratic People’s Republic of Korea
Kum Jun Ryang

Faculty of Physics, Kim Jong Tae Haeju University of Education, Haeju, Democratic People’s Republic of Korea

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APA Style

Yong Taek Pak, Nam Chol Yu, KyongIl Chu, Kum Jun Ryang. (2022). A Method of Determining the Recombination Centre Level in High-Speed Power Devices. Journal of Electrical and Electronic Engineering, 10(3), 86-94. https://doi.org/10.11648/j.jeee.20221003.13

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ACS Style

Yong Taek Pak; Nam Chol Yu; KyongIl Chu; Kum Jun Ryang. A Method of Determining the Recombination Centre Level in High-Speed Power Devices. J. Electr. Electron. Eng. 2022, 10(3), 86-94. doi: 10.11648/j.jeee.20221003.13

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AMA Style

Yong Taek Pak, Nam Chol Yu, KyongIl Chu, Kum Jun Ryang. A Method of Determining the Recombination Centre Level in High-Speed Power Devices. J Electr Electron Eng. 2022;10(3):86-94. doi: 10.11648/j.jeee.20221003.13

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@article{10.11648/j.jeee.20221003.13,
  author = {Yong Taek Pak and Nam Chol Yu and KyongIl Chu and Kum Jun Ryang},
  title = {A Method of Determining the Recombination Centre Level in High-Speed Power Devices},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {10},
  number = {3},
  pages = {86-94},
  doi = {10.11648/j.jeee.20221003.13},
  url = {https://doi.org/10.11648/j.jeee.20221003.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20221003.13},
  abstract = {Rational adjusting 3 main parameters of fast p+nn+ structure such as the forward voltage drop, reverse recovery time and reverse current means to control rationally the carrier lifetime of high and low level and the space-charge generation carrier lifetime. In other words, we should make the lifetime of the high-level carrier and the space charge generation carrier as long as possible but the low-level carrier lifetime as short as possible. The best way to satisfying these relations is forming the optimal recombination center level. In this paper, we analyze of optimal recombination center level to adjust rationally the 3 main parameters of fast p+nn+ structure - forward voltage drop, reverse recovery time and reverse current. Forward voltage drop of p+nn+ structure is affected strongly by the high-level carrier lifetime. Reverse current is affected strongly by the low-level lifetime and reverse recovery time is affected strongly by the space-charge generation lifetime. These 3 carrier lifetimes influence 3 main parameters of p+nn+ structure differently. When we decrease the low-level carrier lifetime in order to decrease the reverse recovery time, the forward voltage drop increases and when we increase the high-level carrier lifetime for reducing the forward voltage drop, the reverse recovery time increases. So, in order to adjust these conflicting relations, we will illuminate about the recombination center level formed in the basic floor of p+nn+ structure. On the other hand, to determine the recombination center level coincide with practical recombination center level, we suggest the analytic method of determination the recombination center level formed by 2 carrier lifetime regulation sources.},
 year = {2022}
}

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TY  - JOUR
T1  - A Method of Determining the Recombination Centre Level in High-Speed Power Devices
AU  - Yong Taek Pak
AU  - Nam Chol Yu
AU  - KyongIl Chu
AU  - Kum Jun Ryang
Y1  - 2022/06/08
PY  - 2022
N1  - https://doi.org/10.11648/j.jeee.20221003.13
DO  - 10.11648/j.jeee.20221003.13
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 86
EP  - 94
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20221003.13
AB  - Rational adjusting 3 main parameters of fast p+nn+ structure such as the forward voltage drop, reverse recovery time and reverse current means to control rationally the carrier lifetime of high and low level and the space-charge generation carrier lifetime. In other words, we should make the lifetime of the high-level carrier and the space charge generation carrier as long as possible but the low-level carrier lifetime as short as possible. The best way to satisfying these relations is forming the optimal recombination center level. In this paper, we analyze of optimal recombination center level to adjust rationally the 3 main parameters of fast p+nn+ structure - forward voltage drop, reverse recovery time and reverse current. Forward voltage drop of p+nn+ structure is affected strongly by the high-level carrier lifetime. Reverse current is affected strongly by the low-level lifetime and reverse recovery time is affected strongly by the space-charge generation lifetime. These 3 carrier lifetimes influence 3 main parameters of p+nn+ structure differently. When we decrease the low-level carrier lifetime in order to decrease the reverse recovery time, the forward voltage drop increases and when we increase the high-level carrier lifetime for reducing the forward voltage drop, the reverse recovery time increases. So, in order to adjust these conflicting relations, we will illuminate about the recombination center level formed in the basic floor of p+nn+ structure. On the other hand, to determine the recombination center level coincide with practical recombination center level, we suggest the analytic method of determination the recombination center level formed by 2 carrier lifetime regulation sources.
VL  - 10
IS  - 3
ER  -

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